In power electronics, semiconductors made of silicon or silicon carbide are among the most important and cost-intensive components. The semiconductors are used for transistors known as Insulated Gate Bipolar Transistors (IGBTs), which are indispensable for an electric drive. Depending on operational conditions, these modules are subjected to high thermal loads. This makes it particularly challenging to correctly dimension the semiconductor surface: on the one hand, reliable operation of the system must be ensured for 15 years or more, and on the other hand, the use of materials must be optimal in terms of installation space and costs. It is therefore difficult for developers to find a balance between safety reserves and cost-effectiveness. The reason for this is the lack of precise data on operating loads and aging of semiconductors under real conditions.