Due to this situation, ZF has decided to use a new semiconductor material in its next generation of power electronics. Instead of the pure silicon that has been used thus far, the semiconductors used in the next decade will be based on silicon carbide (SiC). In the grid structure of the substance used in the different phases, each silicon atom is linked by covalent bonds with four carbon atoms and vice versa. As a semiconductor material, silicon carbide has a relatively large band gap. The valence electrons have a stronger bond to the nucleus, far more than is the case with pure silicon. As a result, a silicon carbide semiconductor can manage ten times the reverse voltage level than a silicon semiconductor of the same thickness. A thickness of about 0.1 millimeters is enough to create a power bridge in an 800-volt propulsion unit, while the internal resistance remains considerably lower. Initial calculations show that, depending on the operating cycle, expected losses in power electronics can be reduced by between five and ten percent. This means an electric vehicle with the same battery can travel a greater distance.